abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rrm = 4500 v i f(av)m = 1200 a i fsm = 2510 3 a v (t0) = 1.3 v r t = 0.48 m w v dc-link = 2800 v fast recovery diode 5sdf 13h4501 doc. no. 5sya1104-02 oct. 06 patented free-floating silicon technology low on-state and switching losses optimized for use as freewheeling diode in gto converters with high dc link voltages industry standard housing cosmic radiation withstand rating blocking maximum rated values 1) parameter symbol conditions value unit repetitive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t vj = 125c 4500 v permanent dc voltage for 100 fit failure rate v dc-link ambient cosmic radiation at sea level in open air. (100% duty) 2800 v characteristic values parameter symbol conditions min typ max unit repetitive peak reverse current i rrm v r = v rrm , t vj = 125c 50 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 36 40 44 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 200 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 0.83 kg housing thickness h 26.0 26.4 mm surface creepage distance d s 30 mm air strike distance d a 20 mm note 1 maximum rated values indicate limits beyond which damage to the device may occur
5sdf 13h4501 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1104-02 oct. 06 page 2 of 7 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m half sine wave, t c = 85 c 1200 a max. rms on-state current i f(rms) 1900 a max. peak non-repetitive surge current i fsm 2510 3 a limiting load integral i 2 t t p = 10 ms, t vj = 125c, v r = 0 v 3.1310 6 a 2 s max. peak non-repetitive surge current i fsm 6010 3 a limiting load integral i 2 t t p = 1 ms, t vj = 125c, v r = 0 v 1.810 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 2500 a, t vj = 125c 2.5 v threshold voltage v (t0) 1.3 v slope resistance r t t vj = 125c i f = 400...4000 a 0.48 m w turn-on characteristic values parameter symbol conditions min typ max unit peak forward recovery voltage v frm di f /dt = 500 a/s, t vj = 125c 50 v turn-off characteristic values parameter symbol conditions min typ max unit reverse recovery current i rm 800 a reverse recovery charge q rr 3000 c turn-off energy e rr di/dt = 300 a/s, i fq = 1000 a, t j = 125c, v rm = 4500 v, c s = 3 f (gto snubber circuit) 1.25 j
5sdf 13h4501 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1104-02 oct. 06 page 3 of 7 thermal maximum rated values note 1 parameter symbol conditions min typ max unit operating junction temperature range t vj -40 125 c storage temperature range t stg -40 125 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 36...44 kn 12 k/kw r th(j-c)a anode-side cooled f m = 36...44 kn 24 k/kw r th(j-c)c cathode-side cooled f m = 36...44 kn 24 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 36...44 kn 3 k/kw r th(c-h) single-side cooled f m = 36...44 kn 6 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 7.440 2.000 1.840 0.710 t i (s) 0.4700 0.0910 0.0110 0.0047 fig. 1 transient thermal impedance junction-to-case
5sdf 13h4501 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1104-02 oct. 06 page 4 of 7 fig. 2 max. on-state voltage characteristics fig. 3 surge on-state current vs. pulse length. half- sine wave fig. 4 upper scatter range of turn-off energy per pulse vs. turn-off current fig. 5 upper scatter range of turn-off energy per pulse vs reverse current rise rate
5sdf 13h4501 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1104-02 oct. 06 page 5 of 7 fig. 6 upper scatter range of turn-off energy per pulse vs reverse current rise rate fig. 7 upper scatter range of repetitive reverse recovery charge vs reverse current rise rate. fig. 8 upper scatter range of reverse recovery current vs reverse current rise rate fig. 9 forward recovery vs. tunrn on di/dt (max. values)
5sdf 13h4501 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1104-02 oct. 06 page 6 of 7 v fr di f /dt i f (t) v f (t) t fr t fr (typ) 10 s v f (t), i f (t) t v rm v r (t) i f (t) i rm -di f /dt q rr i r (t) v f (t) fig. 10 general current and voltage waveforms l i l load dut v dc-link i f r s d s c s fig. 11 test circuit.
5sdf 13h4501 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1104-02 oct. 06 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors fig. 12 outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise related documents: doc. nr titel 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors 5szk 9104 specification of environmental class for pressure contact diodes, pcts and gto, storage available on request, please contact factory 5szk 9105 specification of environmental class for pressure contact diodes, pcts and gto, transportation available on request, please contact factory please refer to http://www.abb.com/semiconductors for actual versions.
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